Infineon IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247
The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features:
- Lowest VCEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery anti-parallel Emitter Controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits:
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600 V and 1200 V for flexibility of design
- High device reliability
Target Applications:
- Industrial heating and welding
- Solutions for solar energy systems
- Uninterruptible power supply (UPS)
- Home appliances
- Room air conditioners
- Motor control and drives
Q1. What is your terms of packing?
A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.
Q2. What is your MOQ?
A:We provide you small MOQ for each item, it depends your specific order!
Q3. Do you test or check all your goods before delivery?
A: Yes, we have 100% test and check all goods before delivery.
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We keep good quality and competitive price to ensure our customers benefit ;
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Infineon IGBT Driver Low Loss DuoPack 600V 75A With Anti Parallel Diode In TO-247 Images
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